| PART |
Description |
Maker |
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| KBE00F005A-D411 KBE00F005A |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG[Samsung semiconductor]
|
| MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| WV3EG128M72EFSR335D3SG |
1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA 1GB 128Mx72 DDR SDRAM的注册瓦锁相环，FBGA封装
|
Electronic Theatre Controls, Inc.
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
